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BSM25GAL120DN2 |
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| Part Number | BSM25GAL120DN2 |
| Manufacturer | Siemens Semiconductor Group |
| Title | IGBT |
| Features |
onductor Group
1
Mar-29-1996
BSM 25 GAL 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.5 3.1 0.5 2 6.5 3 3.7
V
VGE = VCE, IC = 1 mA
Collector-emitter satu... |
| Document |
 BSM25GAL120DN2 Data Sheet
PDF 62.20KB |
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