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BSM150GB170DN2E3166 |
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| Part Number | BSM150GB170DN2E3166 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BSM150GB170DN2 E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • RG on,min = 10 Ohm Type B... |
| Features |
1
Aug-01-1996
BSM150GB170DN2 E3166
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.8 5.5 3.4 4.6 1 4 6.2 3.9 5.3
V
VGE = VCE, IC = 10 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 150 A, Tj = 25 °C VGE = 15 V, IC = 150 A, Tj = 125 °C
Zero gate voltage collector current
ICES
1.5 -
mA
VCE = 1700 V, VGE = 0 V, Tj = 25 °C VCE = 1700 V, VGE = 0 V, Tj = 125 °C
Gate-emitter leakage current
IGES
400
nA
VGE = 20 V, VCE = 0 V
AC Characteristics Tr... |
| Document |
 BSM150GB170DN2E3166 Data Sheet
PDF 129.89KB |
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