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BSM100GD120DN2 |
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| Part Number | BSM100GD120DN2 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BSM 100 GD 120 DN2 IGBT Power Module Preliminary data • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 100 GD 120 ... |
| Features |
BSM 100 GD 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.5 3.1 1.5 6 6.5 3 3.7
V
VGE = VCE, IC = 4 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 100 A, Tj = 25 °C VGE = 15 V, IC = 100 A, Tj = 125 °C
Zero gate voltage collector current
ICES
2 -
mA
VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C
Gate-emitter leakage current
IGES
400
nA
VGE = 20 V, VCE = 0 V
AC Characteristics Transconductance
gfs
54... |
| Document |
 BSM100GD120DN2 Data Sheet
PDF 185.22KB |
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