BSD22 |
Part Number | BSD22 |
Manufacturer | NXP (https://www.nxp.com/) |
Description | Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type.The transistor is sealed in a SOT143 envelope and features a low ON-resistance and low capacitances.... |
Features |
a low ON-resistance and low capacitances.The transistor is protected against excessive input voltages by integrated back-to-back diodes between gate and substrate. Applications: • analog and/or digital switch • switch driver • convertor • chopper PINNING 1 2 3 4 = substrate (b) = source = drain = gate Fig.1 Simplified outline and symbol. 1 Top view 2 MAM389 BSD22 Marking code: M32 handbook, halfpage 4 3 d b g s Note 1. Drain and source are interchangeable QUICK REFERENCE DATA Drain-source voltage Gate-source voltage Drain current (DC) Total power dissipation up to Tamb = 25 °C Junction... |
Document |
BSD22 Data Sheet
PDF 39.80KB |
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