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GA100SICP12-227 |
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| Part Number | GA100SICP12-227 |
| Manufacturer | GeneSiC |
| Description | GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features • 175 °C Maximum Operating Temperature • Gate Oxide Free SiC Switch • Optional Gate Return Pin • Exceptional Safe O... |
| Features |
• 175 °C Maximum Operating Temperature • Gate Oxide Free SiC Switch • Optional Gate Return Pin • Exceptional Safe Operating Area • Integrated SiC Schottky Rectifier • Excellent Gain Linearity • Temperature Independent Switching Performance • Low Output Capacitance • Positive Temperature Coefficient of RDS,ON • Suitable for Connecting an Anti-parallel Diode Advantages • Compatible with Si MOSFET/IGBT Gate Drive ICs • > 20 µs Short-Circuit Withstand Capability • Lowest-in-class Conduction Losses • High Circuit Efficiency • Minimal Input Signal Distortion • High Amplifier Bandwidth • Reduced cool... |
| Document |
 GA100SICP12-227 Data Sheet
PDF 1.25MB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GA100 |
Microsemi |
SCRs |
|
| 2 | GA100K6A1A |
TE |
THERMISTORS |
|
| 3 | GA100K6A1B |
TE |
THERMISTORS |
|
| 4 | GA100K6A1C |
TE |
THERMISTORS |
|
| 5 | GA100K6A1D |
TE |
THERMISTORS |
|
| 6 | GA100NA60U |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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