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BUZ51 |
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| Part Number | BUZ51 |
| Manufacturer | Siemens Semiconductor Group |
| Description | www.DataSheet4U.com BUZ 51 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 51 VDS 1000 V ID 3.4 A RDS(on) 4Ω Package TO-220 AB O... |
| Features |
trical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
1000 3 0.1 10 10 3.6 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 100
µA
VDS = 1000 V, VGS = 0 V, Tj = 25 °C VDS = 1000 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA Ω 4
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 10 V, ID = 2.2 A
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| Document |
 BUZ51 Data Sheet
PDF 162.79KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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