Busque con el número de pieza junto con el fabricante o la descripción
BUZ50B |
Click to view a larger image
| Part Number | BUZ50B |
| Manufacturer | Siemens Semiconductor Group |
| Description | www.DataSheet4U.com BUZ 50 B SIPMOS ® Power Transistor • N channel • Enhancement mode Pin 1 G Pin 2 D Pin 3 S Type BUZ 50 B VDS 1000 V ID 2A RDS(on) 8Ω Package TO-220 AB Ordering Code C670... |
| Features |
n voltage Values typ. max. Unit
V(BR)DSS
1000 3 20 100 10 6.5 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
250 1000
µA
VDS = 1000 V, VGS = 0 V, Tj = 25 °C VDS = 1000 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA Ω 8
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 10 V, ID = 1.5 A
ww
w.D
ata
Sh
eet
4U
.co
m
Semiconductor Group
2
07/96
www.DataSheet4U.com
BUZ 50 B
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol m... |
| Document |
 BUZ50B Data Sheet
PDF 167.28KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUZ50A |
Siemens Semiconductor Group |
Power Transistor |
|
| 2 | BUZ50A |
ETC |
HIGH VOLTAGE POWER MOSFET |
|
| 3 | BUZ50A-220M |
Seme LAB |
MOS POWER N-CHANNEL ENHANCEMENT MODE TRANSISTORS |
|
| 4 | BUZ50B-220M |
Seme LAB |
MOS POWER N-CHANNEL ENHANCEMENT MODE TRANSISTORS |
|
| 5 | BUZ50C |
Siemens Semiconductor Group |
Power Transistor |
|
| 6 | BUZ51 |
Siemens Semiconductor Group |
Power Transistor |
|
Desde 2024. D4U Semiconductor.
|