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BUZ103SL-4 |
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| Part Number | BUZ103SL-4 |
| Manufacturer | Siemens Semiconductor Group |
| Description | Preliminary data BUZ 103SL-4 SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type BUZ 103SL-4 VDS 55 V ID 4.8 A RDS(on) 0.055 Ω Packag... |
| Features |
g point 1) Thermal resistance, junction - ambient 2) Values typ. tbd 62.5 max. K/W Unit
RthJS RthJA
-
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70µm thick) copper area for Drain connection. PCB is vertical without blown air.
2) one channel active
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
55 1.6 0.1 10 0.0403 2
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
1.2
VGS=VDS, ID = 50 µA
Zero gate voltage drain cur... |
| Document |
 BUZ103SL-4 Data Sheet
PDF 107.82KB |
Similar Datasheet
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| 1 | BUZ103SL |
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| 2 | BUZ103S |
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Desde 2024. D4U Semiconductor.
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