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BUT211X |
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| Part Number | BUT211X |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | Enhanced performance, new generation, high speed switching npn transistor in a plastic full-pack envelope specially suited for high frequency electronic lighting ballast applications. QUICK REFERENCE... |
| Features |
emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 850 400 5 10 2 4 32 150 150 UNIT V V A A A A W ˚C ˚C
Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heat sink Junction to ambient in free air CONDITIONS TYP. MAX. 3.95 55 UNIT K/W K/W
March 1996
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT211X
ISOLAT... |
| Document |
 BUT211X Data Sheet
PDF 57.93KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUT211 |
NXP |
Silicon Diffused Power Transistor |
|
| 2 | BUT21B |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 3 | BUT21BF |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | BUT21BF |
NXP |
(BUT21BF / BUT21CF) Silicon Diffused Power Transistor |
|
| 5 | BUT21C |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 6 | BUT21CF |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
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