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BUT211 |
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| Part Number | BUT211 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL... |
| Features |
peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 850 400 5 10 2 4 100 150 150 UNIT V V A A A A W ˚C ˚C
Tmb ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient in free air CONDITIONS TYP. MAX. 1.25 60 UNIT K/W K/W
March 1996
1
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT211
STATIC CHARACTERI... |
| Document |
 BUT211 Data Sheet
PDF 70.82KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUT211X |
NXP |
Silicon Diffused Power Transistor |
|
| 2 | BUT21B |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 3 | BUT21BF |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | BUT21BF |
NXP |
(BUT21BF / BUT21CF) Silicon Diffused Power Transistor |
|
| 5 | BUT21C |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 6 | BUT21CF |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
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