BUP314S |
Part Number | BUP314S |
Manufacturer | Siemens Semiconductor Group |
Description | BUP 314S Preliminary data IGBT • High switching speed • Very low switching losses • Low tail current • Latch-up free • Avalanche rated Pin 1 G Type BUP 314S Maximum Ratings Parameter Collector-emit... |
Features |
50 / 56 Unit -
RthJC
≤ 0.42
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CES
1200 5.5 5.5 4.6 8 6.6 6.5 7.6 -
V
VGE = 0 V, IC = 0.3 mA, Tj = 25 °C
Gate threshold voltage
VGE(th)
4.5
VGE = VCE, IC = 0.35 mA, Tj = 25 °C
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 15 A, Tj = 25 °C VGE = 15 V, IC = 15 A, Tj = 125 °C VGE = 15 V, IC = 30 A, Tj = 25 °C VGE = 15 V, IC = 30 A, Tj = 125 °C
Zero gate voltage collector current
ICES
0.8
m... |
Document |
BUP314S Data Sheet
PDF 59.78KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BUP314 |
Siemens Semiconductor Group |
IGBT | |
2 | BUP314D |
Siemens Semiconductor Group |
IGBT | |
3 | BUP311D |
Infineon Technologies |
IGBT With Antiparallel Diode Preliminary data sheet | |
4 | BUP312 |
Siemens |
IGBT | |
5 | BUP313 |
Siemens Semiconductor Group |
IGBT | |
6 | BUP313D |
Siemens Semiconductor Group |
IGBT |