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BUP314D |
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| Part Number | BUP314D |
| Manufacturer | Siemens Semiconductor Group |
| Description | BUP 314D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 G Type BUP 314D Max... |
| Features |
nce, chip case Diode thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit -
RthJC RthJCD
≤ 0.42 ≤ 0.83
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.7 3.3 3.4 4.3 6.5 3.2 3.9 -
V
VGE = VCE, IC = 0.35 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 25 A, Tj = 25 °C VGE = 15 V, IC = 25 A, Tj = 125 °C VGE = 15 V, IC = 42 A, Tj = 25 °C VGE = 15 V, IC = 42 A, Tj = 125 °C
Zero gate voltage collector current
ICES
0.8
mA nA 1... |
| Document |
 BUP314D Data Sheet
PDF 105.29KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUP314 |
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| 2 | BUP314S |
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| 3 | BUP311D |
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| 4 | BUP312 |
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| 5 | BUP313 |
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| 6 | BUP313D |
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