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BUP309 |
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| Part Number | BUP309 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BUP 309 IGBT Preliminary data • High switching speed • Low tail current • Latch-up free • Avalanche rated • Low forward voltage drop Remark: The TO-218 AB case doesn't solve the standards VDE 0110 an... |
| Features |
hermal Resistance Thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit -
RthJC
≤ 0.4
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 3.5 4.5 1 6.5 4.2 -
V
VGE = VCE, IC = 1 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 15 A, Tj = 25 °C VGE = 15 V, IC = 15 A, Tj = 125 °C VGE = 15 V, IC = 15 A, Tj = 150 °C
Zero gate voltage collector current
ICES
250 1000
µA
VCE = 1700 V, VGE = 0 V, Tj = 25 °C VCE = 1700 V, VGE = 0 V, Tj... |
| Document |
 BUP309 Data Sheet
PDF 113.03KB |
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