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BUP306D |
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| Part Number | BUP306D |
| Manufacturer | Siemens Semiconductor Group |
| Description | BUP 306D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 G Pin 2 C Pin 3 E... |
| Features |
Diode thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit -
RthJC RthJCD
0.63 1.25
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.8 3.8 6.5 3.3 4.3
V
VGE = VCE, IC = 0.7 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 10 A, Tj = 25 °C VGE = 15 V, IC = 10 A, Tj = 125 °C
Zero gate voltage collector current
ICES
0.4
mA nA 100
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
Gate-emitter leakage current
IGES
VGE = 20 V, VCE = 0 V
A... |
| Document |
 BUP306D Data Sheet
PDF 221.51KB |
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