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BULB128D |
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| Part Number | BULB128D |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge terminati... |
| Features |
j Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0, IB = 2 A, t p < 10 µ s, T j < 150 o C) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 700 400 V (BR)EBO 4 8 2 4 70 -65 to 150 150 Unit V V V A A A A W o C o C 1/7
September 2003
BULB128D-1
THERMAL DATA
R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.78 62.5
o o
C/W C/W
ELECTRICAL ... |
| Document |
 BULB128D Data Sheet
PDF 210.60KB |
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