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BUL70A |
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| Part Number | BUL70A |
| Manufacturer | Seme LAB |
| Description | LAB MECHANICAL DATA Dimensions in mm 0.32 0.24 SEME BUL70A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 13° 0.10 0.02 16° max. 1.70 max. 10° max. 6.7 6.3 3... |
| Features |
• Multi –base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. • Triple Guard Rings for improved control of high voltages. SOT-223 Pin 1 - Base Pin 2 - Collector Pin 3 - Emitter Pin 4 - Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC IC(PK) IB Ptot Tstg Semelab plc. Collector – Base Voltage(IE=0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (I... |
| Document |
 BUL70A Data Sheet
PDF 21.09KB |
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