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BUL52B |
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| Part Number | BUL52B |
| Manufacturer | Seme LAB |
| Description | LAB MECHANICAL DATA Dimensions in mm 10.2 1.3 4.5 SEME BUL52B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applicatio... |
| Features |
TO220 • Multi –base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. • Triple Guard Rings for improved control of high voltages. Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC IC(PK) IB Ptot Tstg Semelab plc. Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous Collec... |
| Document |
 BUL52B Data Sheet
PDF 19.86KB |
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