BUL147F |
Part Number | BUL147F |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | The BUL310FP is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge terminati... |
Features |
er Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp <5 ms) Base Current Base Peak Current (tp <5 ms) Total Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature
o
Value 1000 500 9 5 10 3 4 36 -65 to 150 150
Uni t V V V V A A A W
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C C
April 1998
1/6
BUL310FP
THERMAL DATA
R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 3.5 62.5
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C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified... |
Document |
BUL147F Data Sheet
PDF 72.99KB |
Similar Datasheet
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