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BUL312FH |
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| Part Number | BUL312FH |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination... |
| Features |
ltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 °C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature Value 1150 500 9 5 10 3 4 36 2500 –65 to 150 150 Unit V V V A A A A W V °C °C 1/6 BUL312FH THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.47 62.5 °C/W °C/W ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified) Symbol ICES ICEO VEBO VCEO(sus)* Pa... |
| Document |
 BUL312FH Data Sheet
PDF 200.14KB |
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Desde 2024. D4U Semiconductor.
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