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BUL1203E STMicroelectronics High voltage fast-switching NPN power transistor Datasheet

BUL1203E 트랜지스터 - 양극(BJT) - 단일 NPN 550V 5A 100W 스루홀 TO-220


STMicroelectronics
BUL1203E
BUL1203E
Part Number BUL1203E
Manufacturer STMicroelectronics (https://www.st.com/)
Description The BUL1203E is manufactured using diffused collector in planar technology to enhance switching speeds and tight hFE range while maintaining a wide RBSOA. Thanks to his enhanced high voltage structure 1 (EHVS1) it has an intrinsic ruggedness which enables the transistor to withstand a high collector...
Features
• High voltage capability
• Low spread of dynamic parameters
• Minimum lot-to-lot spread for reliable operation
• Very high switching speed Applications
• Electronic ballast for fluorescent lighting
• Switch mode power supplies Description The BUL1203E is manufactured using diffused collector in planar technology to enhance switching speeds and tight hFE range while maintaining a wide RBSOA. Thanks to his enhanced high voltage structure 1 (EHVS1) it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the...

Document Datasheet BUL1203E datasheet pdf (337.41KB)
Distributor Distributor
DigiKey
Stock 0 In Stock
Price
5000 units: 1067.4324 KRW
2500 units: 1109.1288 KRW
1250 units: 1167.5088 KRW
500 units: 1375.982 KRW
250 units: 1584.476 KRW
100 units: 1626.11 KRW
50 units: 1976.48 KRW
BuyNow BuyNow BuyNow (Manufacturer a STMicroelectronics)




BUL1203E Distributor

part
STMicroelectronics
BUL1203E
트랜지스터 - 양극(BJT) - 단일 NPN 550V 5A 100W 스루홀 TO-220
5000 units: 1067.4324 KRW
2500 units: 1109.1288 KRW
1250 units: 1167.5088 KRW
500 units: 1375.982 KRW
250 units: 1584.476 KRW
100 units: 1626.11 KRW
50 units: 1976.48 KRW
Distributor
DigiKey

0 In Stock
BuyNow BuyNow
part
STMicroelectronics
BUL1203E
Bipolar Transistors - BJT N Ch 550V 5A PWR TRANS
1 units: 1.7 USD
10 units: 1.4 USD
100 units: 1.12 USD
250 units: 1.04 USD
500 units: 0.944 USD
1000 units: 0.715 USD
10000 units: 0.698 USD
Distributor
Mouser Electronics

1000 In Stock
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part
STMicroelectronics
BUL1203E
High voltage fast-switching NPN power transistor
1 units: 1.67 USD
10 units: 1.37 USD
100 units: 1.1 USD
250 units: 1.02 USD
500 units: 0.93 USD
Distributor
STMicroelectronics

1000 In Stock
BuyNow BuyNow
part
STMicroelectronics
BUL1203E
Trans GP BJT NPN 550V 5A 100000mW 3-Pin(3+Tab) TO-220AB
5000 units: 0.6888 USD
2500 units: 0.7095 USD
2000 units: 0.7358 USD
1250 units: 0.7751 USD
1000 units: 0.8459 USD
500 units: 0.9145 USD
250 units: 1.0753 USD
100 units: 1.1003 USD
50 units: 1.3515 USD
10 units: 1.3751 USD
Distributor
Verical

27000 In Stock
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part
STMicroelectronics
BUL1203E
2000 units: 0.482 USD
Distributor
Future Electronics

0 In Stock
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part
STMicroelectronics
BUL1203E
Transistor: NPN; bipolar; 550V; 5A; 100W; TO220AB
250 units: 0.77 USD
50 units: 0.83 USD
10 units: 0.92 USD
3 units: 1.05 USD
1 units: 1.25 USD
Distributor
TME

0 In Stock
No Longer Stocked
part
STMicroelectronics
BUL1203E
Trans GP BJT NPN 550V 5A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: BUL1203E)
6000 units: 0.51671 USD
4000 units: 0.52782 USD
2000 units: 0.53893 USD
Distributor
Avnet Americas

0 In Stock
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part
STMicroelectronics
BUL1203E
Trans GP BJT NPN 550V 5A 3-Pin(3+Tab) TO-220 (Alt: BUL1203E)
No price available
Distributor
Avnet Silica

0 In Stock
BuyNow BuyNow
part
STMicroelectronics
BUL1203E
Trans GP BJT NPN 550V 5A 3-Pin(3+Tab) TO-220 (Alt: BUL1203E)
No price available
Distributor
EBV Elektronik

0 In Stock
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BUL1203E Similar Datasheet

Part Number Description
BUL1203
manufacturer
STMicroelectronics
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
The BUL1203E is a new device manufactured using Diffused Collector technology to enhance switching speeds and tight h FE range while maintaining a wide RBSOA. Thanks to his structure it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during Breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-BaseVoltage (I E = 0) Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector ...
BUL1203E
manufacturer
INCHANGE
NPN Transistor
·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Electronic ballasts for fluorescent lighting ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCES Collector-Emitter Voltage VBE= 0 1200 V VCEO Collector-Emitter Voltage 550 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current 2 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 100 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL ...




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