BUK452-60B |
Part Number | BUK452-60B |
Manufacturer | NXP (https://www.nxp.com/) |
Description | N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converter... |
Features |
se peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 -60A 15 11 60 60 175 175 MAX. 60 60 30 -60B 14 10 56 UNIT V V V A A A W ˚C ˚C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 60 MAX. 2.5 UNIT K/W K/W
April 1993
1
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK452-60A/B
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified SYMB... |
Document |
BUK452-60B Data Sheet
PDF 54.00KB |
Similar Datasheet
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1 | BUK452-60A |
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PowerMOS transistor | |
2 | BUK452-60A |
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3 | BUK452-60B |
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4 | BUK452-100A |
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5 | BUK452-100A |
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