BUK452-100B NXP PowerMOS transistor Datasheet. existencias, precio

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BUK452-100B

NXP
BUK452-100B
BUK452-100B BUK452-100B
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Part Number BUK452-100B
Manufacturer NXP (https://www.nxp.com/)
Description N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converter...
Features ue) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 -100A 11 7.7 44 60 175 175 MAX. 100 100 30 -100B 10 7 40 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 60 MAX. 2.5 UNIT K/W K/W April 1993 1 Rev 1.100 Philips Semiconductors Product Specification PowerMOS transistor BUK452-100A/B STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL V(B...

Document Datasheet BUK452-100B Data Sheet
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