VF30100C-E3 |
Part Number | VF30100C-E3 |
Manufacturer | Vishay (https://www.vishay.com/) |
Description | V30100C-E3, VF30100C-E3, VB30100C-E3, VI30100C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.455 V at IF = 5 A TO-... |
Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Low thermal resistance • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 1 VB30100C PIN 1 K PIN 2 HEATSINK ADDITIONAL RESOURCES 3D 3D 3D Models VI30100C PIN 1 3 2 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A ... |
Document |
VF30100C-E3 Data Sheet
PDF 208.57KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | VF30100C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
2 | VF30100S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
3 | VF30100S-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier | |
4 | VF30100SG |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
5 | VF30120C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
6 | VF30120C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |