VB20100C-E3 Vishay Dual High Voltage Trench MOS Barrier Schottky Rectifier Datasheet. existencias, precio

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VB20100C-E3

Vishay
VB20100C-E3
VB20100C-E3 VB20100C-E3
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Part Number VB20100C-E3
Manufacturer Vishay (https://www.vishay.com/)
Description V20100C-E3, VB20100C-E3, VF20100C-E3, VI20100C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TO-220AB TM...
Features
• Trench MOS Schottky technology
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C maximum 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package)
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. MECHANICAL DATA Case: TO-220AB, IT...

Document Datasheet VB20100C-E3 Data Sheet
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