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2SB1240 |
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| Part Number | 2SB1240 |
| Manufacturer | GME |
| Description | Medium Power Transistor FEATURES z Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) z Complements the 2SD1862. APPLICATIONS z Epitaxial planar type. z PNP silicon transistor. Pb Lead-free Product... |
| Features |
z Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A)
z Complements the 2SD1862.
APPLICATIONS
z Epitaxial planar type. z PNP silicon transistor.
Pb
Lead-free
Production specification
2SB1240
TO-251
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Volage
-40 V
VCEO
Collector-Emitter Voltage
-32 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current
-2 A
ICP Collector Power Dissipation
-3 A
PC Collector Power Dissipation
1.0 W
Tj ,Tstg
Junction and Storage temperature range
-55 to +150
℃
V038 ... |
| Document |
 2SB1240 Data Sheet
PDF 180.42KB |
Desde 2024. D4U Semiconductor.
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