2SB1243 |
Part Number | 2SB1243 |
Manufacturer | GME |
Description | Power Transistor FEATURES z Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) z Complements the 2SD1864. APPLICATIONS z Epitaxial planar type. z PNP silicon transistor. Pb Lead-free Production spe... |
Features |
z Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A)
z Complements the 2SD1864.
APPLICATIONS
z Epitaxial planar type. z PNP silicon transistor.
Pb
Lead-free
Production specification
2SB1243
TO-251
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Volage
-60 V
VCEO
Collector-Emitter Voltage
-50 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current
-3 A
ICP Collector Power Dissipation
-4.5 A
PC Collector Power Dissipation
1W
Tj ,Tstg
Junction and Storage temperature range
-55 to +150
℃
V039 R... |
Document |
2SB1243 Data Sheet
PDF 187.76KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SB1240 |
Rohm |
Medium power Transistor | |
2 | 2SB1240 |
GME |
Medium Power Transistor | |
3 | 2SB1240 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
4 | 2SB1241 |
Rohm |
Power Transistor | |
5 | 2SB1243 |
Rohm |
Power Transistor | |
6 | 2SB1243 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |