2SC4115 |
Part Number | 2SC4115 |
Manufacturer | CHINA BASE |
Description | 2SC4115 NPN Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. On special request, these transistors can be manufactured ... |
Features |
․Low VCE(sat) ․Excellent current gain characteristics
1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 OC)
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current
Power Dissipation Junction Temperature Storage Temperature Range *Notes: Single pulse Pw=10ms
Symbol VCBO VCEO VEBO
IC
Ptot Tj TS
Value 40 20 6 3 5 300 150
-55 to +150
Unit V V V
A(DC) A(Pulse)*
mW OC OC
Page 1 of 3
7/15/2011
Characteristics at Tamb=25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE=2V,... |
Document |
2SC4115 Data Sheet
PDF 408.33KB |
Similar Datasheet
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