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2SD1819A |
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| Part Number | 2SD1819A |
| Manufacturer | JCET |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SD1819A TRANSISTOR (NPN) FEATURES High DC Current Gain Complementary to 2SB1218A Low Collector to Em... |
| Features |
High DC Current Gain Complementary to 2SB1218A Low Collector to Emitter Saturation Voltage APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 50 VEBO Emitter-Base Voltage 7 IC Collector Current 100 PC Collector Power Dissipation 150 RΘJA Thermal Resistance From Junction To Ambient 833 Tj Junction Temperature Tstg Storage Temperature 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ SOT –323 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25... |
| Document |
 2SD1819A Data Sheet
PDF 259.32KB |
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