K6F4016R4E-F |
Part Number | K6F4016R4E-F |
Manufacturer | Samsung semiconductor |
Title | 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Features |
• Process Technology: Full CMOS • Organization: 256K x16 bit • Power Supply Voltage: 1.65~2.20V • Low Data Retention Voltage: 1.0V(Min) • Three State Outputs • Package Type: 48-TBGA-6.00x7.00 GENERAL DESCRIPTION The K6F4016R4E families are fabricated by SAMSUNG′s advan... |
Document |
K6F4016R4E-F Data Sheet
PDF 146.99KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | K6F4016R4E |
Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
2 | K6F4016R4G |
SAMSUNG Electronics |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
3 | K6F4016R4G-F |
Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
4 | K6F4016U4G |
Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
5 | K6F4016U4G-F |
Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
6 | K6F4016U6G |
Samsung semiconductor |
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM |