logo

2N5290 SSDI PNP Transistor Datasheet

2N5290 Bipolar Transistors - BJT Power BJT


SSDI
2N5290
Part Number 2N5290
Manufacturer SSDI
Description 10 AMP NPN (continued) Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) mhFiEn mhaFEx @Ic (A) 2N6562 2N6581 2N6590 10 450 10 40 5 10 450 7 35 Note 1 10 450 7 35 Note 1 10 AMP PNP Sorted by IC, then VCEO Part Number mIaCx (A) 2N4907 2N4908 2N5621 2N5737 2N5739 2N5875 2N6667 2N4...
Features ...

Document Datasheet 2N5290 datasheet pdf (27.91KB)
Distributor Distributor
Mouser Electronics
Stock 0 In Stock
Price
100 units: 484.48 USD
BuyNow (No Longer Stocked Microchip Technology Inc)




2N5290 Distributor

part
Microchip Technology Inc
2N5290
POWER BJT
100 units: 648945.06 KRW
Distributor
DigiKey

0 In Stock
BuyNow BuyNow
part
Microchip Technology Inc
2N5290
Bipolar Transistors - BJT Power BJT
100 units: 484.48 USD
Distributor
Mouser Electronics

0 In Stock
No Longer Stocked
part
Microchip Technology Inc
2N5290
Power BJT _ TO-61/I, Projected EOL: 2049-02-05
1 units: 484.48 USD
Distributor
Microchip Technology Inc

0 In Stock
BuyNow BuyNow
part
Microchip Technology Inc
2N5290
100 units: 438.62 USD
75 units: 447.57 USD
50 units: 657.51 USD
25 units: 1287.34 USD
Distributor
Onlinecomponents.com

0 In Stock
BuyNow BuyNow
part
Microchip Technology Inc
2N5290
100 units: 480.64 USD
Distributor
Future Electronics

0 In Stock
BuyNow BuyNow
part
Microchip Technology Inc
2N5290
Transistor BJT PNP 100V 10A TO-61 - Bulk (Alt: 2N5290)
500 units: 432.58 USD
100 units: 449.88 USD
1 units: 484.48 USD
Distributor
Avnet Americas

0 In Stock
BuyNow BuyNow
part
Microchip Technology Inc
2N5290
100 units: 438.62 USD
75 units: 447.57 USD
50 units: 657.51 USD
25 units: 1287.34 USD
Distributor
Master Electronics

0 In Stock
BuyNow BuyNow





2N5290 Similar Datasheet

Part Number Description
2N5202
manufacturer
INCHANGE
NPN Transistor
·Collector-emitter sustaining voltage VCEO(SUS)= 90V(Min) ·High saturation voltage ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-current, high-speed switching circuits such as:low-distortion power amplifiers,oscillators, switching regulators, series regulators, converters, and inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO(SUS) Collector-Emitter Voltage 50 V VCER(SUS) Collector-Emitter Voltage RBE= 50Ω 75 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak ...
2N5202
manufacturer
Central Semiconductor
NPN Transistor
The CENTRAL SEMICONDUCTOR 2N5202 is a silicon NPN power transistor mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCER VCEO VEBO IC ICM IB PD TJ, Tstg JC 100 75 50 6.0 4.0 5.0 2.0 35 -65 to +200 5.0 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEV VCE...
2N5202
manufacturer
RCA
Power Transistors
File No. 766 _________________________________ OOOBLJD Solid State Division Power Transistors 2N3878 2N5202 2N3879 2N6500 40375 2N3878 2N3879 2N5202 2N6500 t~.~'~ lHigh-Speed, Epitaxial-Collector Silicon N-P-N Transistors JEOEC TO·66 40375 H-1340 JEDECTO-66 H·1470A With Integral Heat Radiator For High·Speed Switching and Linear·Amplifier Applications Features: a Maximum-area-of-operation curves for de and pulse operation a Rated for safe operation in both forward- and reverse-bias conditions " High sustaining voltage a Total saturated transition time less than 1 p.s for 2N3879, 2N5202, and 2N6500 RCA-2N3878, 2N3879, 2N5202, and 2N6500o are epitaxial silicon n-p-n transistors. The...
2N5204
manufacturer
Knox Semiconductor Inc
25 and 35 Amp RMS SCRs
...
2N5204
manufacturer
International Rectifier
25 and 35 Amp RMS SCRs
...
2N5204
manufacturer
Digitron Semiconductors
SILICON CONTROLLED RECTIFIER
2N681-2N692, 2N5204-2N5207 High-reliability discrete products and engineering services since 1977 SILICON CONTROLLED RECTIFIER FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating RMS on-state current Average on-state current @ TC Peak one cycle surge @ 50 Hz Peak one cycle surge @ 60 Hz Fusing @ 50 Hz Fusing @ 60 Hz Gate current to trigger Typical critical dv/dt exponential to VDRM Critical rate of rise Typical junction temperature Symbol IT(RMS) IT(AV) TC ITSM I2t IGT dv/dt di/dt TJ 2N681-2N692 25 16 -6...
2N5204
manufacturer
Solid State
SCR
...
2N5205
manufacturer
Knox Semiconductor Inc
25 and 35 Amp RMS SCRs
...
2N5205
manufacturer
International Rectifier
25 and 35 Amp RMS SCRs
...
2N5205
manufacturer
Digitron Semiconductors
SILICON CONTROLLED RECTIFIER
2N681-2N692, 2N5204-2N5207 High-reliability discrete products and engineering services since 1977 SILICON CONTROLLED RECTIFIER FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating RMS on-state current Average on-state current @ TC Peak one cycle surge @ 50 Hz Peak one cycle surge @ 60 Hz Fusing @ 50 Hz Fusing @ 60 Hz Gate current to trigger Typical critical dv/dt exponential to VDRM Critical rate of rise Typical junction temperature Symbol IT(RMS) IT(AV) TC ITSM I2t IGT dv/dt di/dt TJ 2N681-2N692 25 16 -6...




logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy