logo

2N6182 SSDI PNP Transistor Datasheet

2N6182 Bipolar Transistors - BJT Power BJT


SSDI
2N6182
Part Number 2N6182
Manufacturer SSDI
Description 10 AMP NPN (continued) Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) mhFiEn mhaFEx @Ic (A) 2N6562 2N6581 2N6590 10 450 10 40 5 10 450 7 35 Note 1 10 450 7 35 Note 1 10 AMP PNP Sorted by IC, then VCEO Part Number mIaCx (A) 2N4907 2N4908 2N5621 2N5737 2N5739 2N5875 2N6667 2N4...
Features ...

Document Datasheet 2N6182 datasheet pdf (27.91KB)
Distributor Distributor
Mouser Electronics
Stock 0 In Stock
Price
100 units: 268.67 USD
BuyNow (No Longer Stocked Microchip Technology Inc)




2N6182 Distributor

part
Microchip Technology Inc
2N6182
POWER BJT
100 units: 359885.34 KRW
Distributor
DigiKey

0 In Stock
BuyNow BuyNow
part
Microchip Technology Inc
2N6182
Bipolar Transistors - BJT Power BJT
100 units: 268.67 USD
Distributor
Mouser Electronics

0 In Stock
No Longer Stocked
part
Microchip Technology Inc
2N6182
Power BJT _ TO-59, Projected EOL: 2049-02-05
1 units: 268.67 USD
Distributor
Microchip Technology Inc

0 In Stock
BuyNow BuyNow
part
Microchip Technology Inc
2N6182
100 units: 243.24 USD
75 units: 248.2 USD
50 units: 364.63 USD
25 units: 713.91 USD
Distributor
Onlinecomponents.com

0 In Stock
BuyNow BuyNow
part
Microchip Technology Inc
2N6182
100 units: 266.55 USD
Distributor
Future Electronics

0 In Stock
BuyNow BuyNow
part
Microchip Technology Inc
2N6182
Transistor BJT PNP 80V 10A TO-59 - Bulk (Alt: 2N6182)
500 units: 239.89 USD
100 units: 249.49 USD
1 units: 268.67 USD
Distributor
Avnet Americas

0 In Stock
BuyNow BuyNow
part
Microchip Technology Inc
2N6182
100 units: 243.24 USD
75 units: 248.2 USD
50 units: 364.63 USD
25 units: 713.91 USD
Distributor
Master Electronics

0 In Stock
BuyNow BuyNow





2N6182 Similar Datasheet

Part Number Description
2N6100
manufacturer
INCHANGE
NPN Transistor
·DC Current Gain - : hFE = 20-80@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 70V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 75 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTIC...
2N6100
manufacturer
RCA
Power Transistors
File No. 485 DUCrBLJD Solid State Division Power Transistors 2N6098 2N6099 2N6100 2N6101 2N6102 2N6103 JEDEC TD-220AA 2N6099 2N6101 2N6103 ~~;,~ ~" JEDEC TO-220AB High-Current, Silicon N-P-N VERSAWATT Transistors Designed for Medium-Power Linear and Switching Service in Consumer, Automotive, and Industrial Applications Features: • Low saturation voltage VCE(satl = 1 V max. at Ic = 4 A (2N6098, 2N6099) = =1 V max. at IC 5 A (2N6100. 2N6101) = =1 V max_ at IC 8 A (2N6102, 2N6103) a VERSAWATT package (molded-silicone plastic) a Maximum safe-area-of-operation curves • Thermal-cvcle rating curve These RCA types are hometaxial-base silicon n-p-n transistors. Tvpes 2N609B, 2N6100. and 2N6102...
2N6100
manufacturer
SavantIC
Silicon Power Transistor
·With TO-220 package ·High current capability APPLICATIONS ·For use in general-purpose amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N6098 VCBO Collector-base voltage 2N6099 2N6100 2N6101 2N6098 VCEO Collector-emitter voltage 2N6099 2N6100 2N6101 VEBO IC PT Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 70 70 80 80 70 70 80 80 8 10 75 150 -65~150 V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to c...
2N6101
manufacturer
RCA
Power Transistors
File No. 485 DUCrBLJD Solid State Division Power Transistors 2N6098 2N6099 2N6100 2N6101 2N6102 2N6103 JEDEC TD-220AA 2N6099 2N6101 2N6103 ~~;,~ ~" JEDEC TO-220AB High-Current, Silicon N-P-N VERSAWATT Transistors Designed for Medium-Power Linear and Switching Service in Consumer, Automotive, and Industrial Applications Features: • Low saturation voltage VCE(satl = 1 V max. at Ic = 4 A (2N6098, 2N6099) = =1 V max. at IC 5 A (2N6100. 2N6101) = =1 V max_ at IC 8 A (2N6102, 2N6103) a VERSAWATT package (molded-silicone plastic) a Maximum safe-area-of-operation curves • Thermal-cvcle rating curve These RCA types are hometaxial-base silicon n-p-n transistors. Tvpes 2N609B, 2N6100. and 2N6102...
2N6101
manufacturer
SavantIC
Silicon Power Transistor
·With TO-220 package ·High current capability APPLICATIONS ·For use in general-purpose amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N6098 VCBO Collector-base voltage 2N6099 2N6100 2N6101 2N6098 VCEO Collector-emitter voltage 2N6099 2N6100 2N6101 VEBO IC PT Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 70 70 80 80 70 70 80 80 8 10 75 150 -65~150 V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to c...
2N6101
manufacturer
INCHANGE
NPN Transistor
·DC Current Gain - : hFE = 20-80@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 70V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in medium power liner amplifier and switching service in consumer ,automotive and industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 75 W 150 ℃ Tstg Storage Temperature Range -65~1...
2N6102
manufacturer
RCA
Power Transistors
File No. 485 DUCrBLJD Solid State Division Power Transistors 2N6098 2N6099 2N6100 2N6101 2N6102 2N6103 JEDEC TD-220AA 2N6099 2N6101 2N6103 ~~;,~ ~" JEDEC TO-220AB High-Current, Silicon N-P-N VERSAWATT Transistors Designed for Medium-Power Linear and Switching Service in Consumer, Automotive, and Industrial Applications Features: • Low saturation voltage VCE(satl = 1 V max. at Ic = 4 A (2N6098, 2N6099) = =1 V max. at IC 5 A (2N6100. 2N6101) = =1 V max_ at IC 8 A (2N6102, 2N6103) a VERSAWATT package (molded-silicone plastic) a Maximum safe-area-of-operation curves • Thermal-cvcle rating curve These RCA types are hometaxial-base silicon n-p-n transistors. Tvpes 2N609B, 2N6100. and 2N6102...
2N6102
manufacturer
SavantIC
Silicon Power Transistor
·With TO-220 package ·2N6102 type with short pin APPLICATIONS ·For use in general-purpose amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 45 45 8 16 75 150 -65~150 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.67 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Produ...
2N6102
manufacturer
INCHANGE
NPN Transistor
·DC Current Gain - : hFE = 20-80@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 40 V VCER Collector-Emitter Voltage RBE= 100Ω 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 16 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 75 W 150 ℃ Tstg Storage Temperature Range -65~1...
2N6103
manufacturer
RCA
Power Transistors
File No. 485 DUCrBLJD Solid State Division Power Transistors 2N6098 2N6099 2N6100 2N6101 2N6102 2N6103 JEDEC TD-220AA 2N6099 2N6101 2N6103 ~~;,~ ~" JEDEC TO-220AB High-Current, Silicon N-P-N VERSAWATT Transistors Designed for Medium-Power Linear and Switching Service in Consumer, Automotive, and Industrial Applications Features: • Low saturation voltage VCE(satl = 1 V max. at Ic = 4 A (2N6098, 2N6099) = =1 V max. at IC 5 A (2N6100. 2N6101) = =1 V max_ at IC 8 A (2N6102, 2N6103) a VERSAWATT package (molded-silicone plastic) a Maximum safe-area-of-operation curves • Thermal-cvcle rating curve These RCA types are hometaxial-base silicon n-p-n transistors. Tvpes 2N609B, 2N6100. and 2N6102...




logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy