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MMBD6050 |
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| Part Number | MMBD6050 |
| Manufacturer | CHINA BASE |
| Description | MMBD6050 Silicon Epitaxial Planar Switching Diode Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applications • Ultra high speed switching appli... |
| Features |
• Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applications • Ultra high speed switching application 3 12 Marking Code: 5D SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Forward Current Non-repetitive Peak Forward Surge Current (t = 1 μs) Power Dissipation Junction Temperature Storage Temperature Range Symbol VR IF IFSM Ptot Tj Tstg Value 70 200 4 350 150 - 55 to + 150 Unit V mA A mW OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA at IF = 100 mA Reverse Current at VR = 50 V ... |
| Document |
 MMBD6050 Data Sheet
PDF 235.70KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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