BCW30 |
Part Number | BCW30 |
Manufacturer | KEC |
Description | SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ᴌComplementary to BCW31/32 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VC... |
Features |
ᴌComplementary to BCW31/32
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
-30
Collector-Emitter Voltage
VCEO
-20
Emitter-Base Voltage
VEBO
-5
Collector Current
IC -100
Collector Power Dissipation
PC * 350
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -65ᴕ150
* : Package Mounted On 99.9% Alumina 10ᴧ8ᴧ0.6mm.
UNIT V V V mA mW ᴱ ᴱ
A G H
D
BCW29/30
EPITAXIAL PLANAR PNP TRANSISTOR
E L BL
23 1
PP
M 1. EMITTER 2. BASE 3. COLLECTOR
DIM A B C D E G H J
K L M
N P
MILLIMETERS 2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX 0.45+0.15/-0.05 2.40... |
Document |
BCW30 Data Sheet
PDF 60.24KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BCW30 |
STMicroelectronics |
SMALL SIGNAL PNP TRANSISTORS | |
2 | BCW30 |
Fairchild Semiconductor |
PNP General Purpose Amplifier | |
3 | BCW30 |
NXP |
PNP general purpose transistors | |
4 | BCW30 |
Diotec Semiconductor |
Surface mount Si-Epitaxial PlanarTransistors | |
5 | BCW30 |
GME |
PNP General Purpose Amplifier | |
6 | BCW30 |
Multicomp |
PNP General Purpose Amplifier |