MBM29LV016B-90 |
Part Number | MBM29LV016B-90 |
Manufacturer | Fujitsu |
Description | FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 16M (2M × 8) BIT DS05-20855-4E MBM29LV016T-80/-90/-12/MBM29LV016B-80/-90/-12 s FEATURES • Single 3.0 V read, program and erase Minimizes system lev... |
Features |
• Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type) • Minimum 100,000 program/erase cycles • High performance 80 ns maximum access time • Sector erase architecture One 16K byte, two 8K bytes, one 32K byte, and thirty-one 64K byte sectors in byte mode Any combination of sectors can be concurrently erased. Also supports full chip erase • Boot Code Sector Arch... |
Document |
MBM29LV016B-90 Data Sheet
PDF 600.85KB |
Similar Datasheet
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1 | MBM29LV016B-12 |
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5 | MBM29LV016T-12 |
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