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WSB5557Z |
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| Part Number | WSB5557Z |
| Manufacturer | WillSEMI |
| Description | WSB5557Z Schottky Barrier Diode Features 100mA Average rectified forward current Low forward voltage Ultra-low leakage current Small package DFN0603-2L Applications Low Current rectification... |
| Features |
100mA Average rectified forward current Low forward voltage Ultra-low leakage current Small package DFN0603-2L Applications Low Current rectification Absolute maximum ratings Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Peak forward surge current (8.3ms single sine pluse) Junction temperature Operating temperature Storage temperature WSB5557Z Http://www.sh-willsemi.com DFN0603-2L(Bottom View) Circuit Symbol VRM VR IO IFSM TJ Topr Tstg Marking Value 30 30 100 2 150 -40 ~ 150 -40 ~ 150 Unit V V mA A OC OC OC Electronics chara... |
| Document |
 WSB5557Z Data Sheet
PDF 597.98KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | WSB5552TH |
WillSEMI |
Schottky Barrier Rectifier |
|
| 2 | WSB5556Z |
WillSEMI |
Schottky Barrier Diode |
|
| 3 | WSB5558N |
WillSEMI |
Schottky Barrier Diode |
|
| 4 | WSB5503W |
Will Semiconductor |
Middle Power Schottky Barrier Diode |
|
| 5 | WSB5507W |
WillSEMI |
Schottky Barrier Diode |
|
| 6 | WSB5508L |
WillSEMI |
Schottky Barrier Diode |
|
Desde 2024. D4U Semiconductor.
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