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WSB5556Z |
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| Part Number | WSB5556Z |
| Manufacturer | WillSEMI |
| Description | WSB5556Z Schottky Barrier Diode Features 100mA Average rectified forward current Low forward voltage Low leakage current Small package DFN0603-2L Applications Low Current rectification Absol... |
| Features |
100mA Average rectified forward current Low forward voltage Low leakage current Small package DFN0603-2L Applications Low Current rectification Absolute maximum ratings Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Peak forward surge current (8.3ms single sine pluse) Junction temperature Operating temperature Storage temperature WSB5556Z Http://www.sh-willsemi.com DFN0603-2L(Bottom View) Circuit Symbol VRM VR IO IFSM TJ Topr Tstg Marking Value 30 30 100 2 150 -40 ~ 150 -40 ~ 150 Unit V V mA A OC OC OC Electronics characteris... |
| Document |
 WSB5556Z Data Sheet
PDF 673.46KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | WSB5552TH |
WillSEMI |
Schottky Barrier Rectifier |
|
| 2 | WSB5557Z |
WillSEMI |
Schottky Barrier Diode |
|
| 3 | WSB5558N |
WillSEMI |
Schottky Barrier Diode |
|
| 4 | WSB5503W |
Will Semiconductor |
Middle Power Schottky Barrier Diode |
|
| 5 | WSB5507W |
WillSEMI |
Schottky Barrier Diode |
|
| 6 | WSB5508L |
WillSEMI |
Schottky Barrier Diode |
|
Desde 2024. D4U Semiconductor.
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