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WSB5543W |
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| Part Number | WSB5543W |
| Manufacturer | WillSEMI |
| Description | WSB5543W Middle Power Schottky Barrier Diode Features 1.0A Average rectified forward current Trench MOS Schottky technology Low forward voltage,low leakage current Small package SOD-323F Appli... |
| Features |
1.0A Average rectified forward current Trench MOS Schottky technology Low forward voltage,low leakage current Small package SOD-323F Applications Switching circuit Middle current rectification Absolute maximum ratings Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(1) Forward peak surge current(2) Junction temperature Operating temperature Storage temperature WSB5543W Http://www.sh-willsemi.com SOD-323F Circuit Symbol VRM VR IO IFSM TJ Topr Tstg Marking Value 40 40 1.0 7 -55 ~ 150 -55 ~ 150 -55 ~ 150 Unit V V A A OC OC OC E... |
| Document |
 WSB5543W Data Sheet
PDF 242.02KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | WSB5546N |
WillSEMI |
Schottky Barrier Diode |
|
| 2 | WSB5549N |
WillSEMI |
Schottky Barrier Diode |
|
| 3 | WSB5503W |
Will Semiconductor |
Middle Power Schottky Barrier Diode |
|
| 4 | WSB5507W |
WillSEMI |
Schottky Barrier Diode |
|
| 5 | WSB5508L |
WillSEMI |
Schottky Barrier Diode |
|
| 6 | WSB5510M |
WillSEMI |
Schottky Barrier Diode |
|
Desde 2024. D4U Semiconductor.
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