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WNMD2179 |
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| Part Number | WNMD2179 |
| Manufacturer | Will Semiconductor |
| Description | The WNMD2179 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in D... |
| Features |
TSOT-23-6L G1 D1/D2 G2 654
1 23 S1 D1/D2 S2 Pin configuration (Top view)
6 54
Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package TSOT-23-6L Applications Driver for Relay, Solenoid, Motor, LED etc. DC-DC converter circuit Power Switch Load Switch Charging 2179 NDYW 123 2179 ND Y W = Device Code = Special Code = Year =Week(A~z) Marking Order information Device WNM... |
| Document |
 WNMD2179 Data Sheet
PDF 1.39MB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | WNMD2171 |
Will Semiconductor |
Dual N-Channel MOSFET |
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| 2 | WNMD2172 |
Will Semiconductor |
Dual N-Channel MOSFET |
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| 3 | WNMD2173 |
Will Semiconductor |
Dual N-Channel MOSFET |
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| 4 | WNMD2174 |
Will Semiconductor |
Dual N-Channel MOSFET |
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| 5 | WNMD2176 |
WillSEMI |
MOSFET |
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| 6 | WNMD2178 |
WillSEMI |
MOSFET |
|
Desde 2024. D4U Semiconductor.
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