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WNM4006 |
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| Part Number | WNM4006 |
| Manufacturer | Will Semiconductor |
| Description | The WNM4006 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC... |
| Features |
z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23
WNM4006
Http//:www.willsemi.com
SOT-23
D 3
12 GS Pin configuration (Top view)
W46*
W46 *
= Device Code = Month (A~Z)
Applications
z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging
Marking
Order information
Device
Package
Shipping
WNM4006-3/TR SOT-23 3000/Reel&Tape
Will Semiconductor Ltd. 1 Feb, 2012 - Rev.1.0
Abso... |
| Document |
 WNM4006 Data Sheet
PDF 124.69KB |
Similar Datasheet
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