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WNM3011 |
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| Part Number | WNM3011 |
| Manufacturer | Will Semiconductor |
| Description | The WNM3011 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-... |
| Features |
z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23-6L
Applications
6 54
3011 YYWW
1 23
3011 YY WW
= Device Code =Year =Week
Marking
z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging
Order Information
Device
Package
WNM3011-6/TR SOT-23-6L
Shipping 3000/Tape&Reel
Will Semiconductor Ltd. 1 Dec, 2011 - Rev.1.0
Absolute Maximum ratings
... |
| Document |
 WNM3011 Data Sheet
PDF 194.04KB |
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