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WNM12N65 |
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| Part Number | WNM12N65 |
| Manufacturer | Will Semiconductor |
| Description | The WNM12N65/WNM12N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is sui... |
| Features |
650V@TJ=25°C Typ.RDS(on)=0.57Ω Low gate charge 100% avalanche tested 100% Rg tested D GDS TOT-O22- 0 12N65 12N65F G S GD S TO-220F WNM12N65 =Devices code Y Y =Year WW =Week WNM12N65 F =Devices code Y Y =Year WW =Week Order Information Device Package WNM12N65_3/T TO-220 WNM12N65F_3/T TO-220-F Units/Tube 50 50 Absolution Maximum Ratings TA=25oC unless otherwise noted Parameter Symbol WNM12N65 WNM12N65F Drain-Source Voltage Gate-Source Voltage TC=25°C Continuous Drain Current TC=100°C Pulsed Drain Current Single Pulsed Avalanche Energy C VDS 650 VGS ±... |
| Document |
 WNM12N65 Data Sheet
PDF 1.01MB |
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