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EMC04N08E |
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| Part Number | EMC04N08E |
| Manufacturer | Excelliance MOS |
| Description | EMC04N08E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 75V D RDSON (MAX.) 4.3mΩ ID 163A G UIS, Rg 100% Tested S Pb‐Free Lead Plating ABSOLUTE MAX... |
| Features |
EMC04N08E
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current
On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1
V(BR)DSS VGS(th) IGSS IDSS
ID(ON) RDS(ON)
gfs
VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±30V VDS = 60V, VGS = 0V VDS = 50V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V VGS = 10V, ID = 50A
VDS = 5V, ID = 50A
DYNAMIC
75
V
2.0 3.0 4.0
±100 nA
1... |
| Document |
 EMC04N08E Data Sheet
PDF 226.49KB |
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Desde 2024. D4U Semiconductor.
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