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EMB12N03VAT |
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| Part Number | EMB12N03VAT |
| Manufacturer | Excelliance MOS |
| Description | EMB12N03VAT N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 11.5mΩ ID 9A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Fr... |
| Features |
2015/7/22 p.1
EMB12N03VAT
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current
On‐State Drain Current1 Drain‐Source On‐State Resistance1
Forward Transconductance1
V(BR)DSS VGS(th) IGSS IDSS
ID(ON) RDS(ON)
gfs
VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V
VGS = 10V, ID = 9A VGS = 4.5V, ID = 6A VDS = 5V, ID = 9A
DYN... |
| Document |
 EMB12N03VAT Data Sheet
PDF 182.60KB |
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| 1 | EMB12N03V |
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| 2 | EMB12N03A |
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Desde 2024. D4U Semiconductor.
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