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EMB03K03HP |
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| Part Number | EMB03K03HP |
| Manufacturer | Excelliance MOS |
| Description | (Preliminary) N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: S2 S2 S2 G2 N‐CH‐Q1 N‐CH‐Q2 BVDSS 30V RDSON (MAX.) 7mΩ 30V 3.5mΩ D2 / S1 ID 15A 25A D1 UIS, R... |
| Features |
d by maximum junction temperature. 2Duty cycle 1％ RJA when mounted on a 1 in2 pad of 2 oz copper.
TYPICAL
2014/5/20
MAXIMUM
2.6
1.25
62
55
27
24
UNIT °C / W
p.1
(Preliminary)
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain‐Source Breakdown Voltage
V(BR)DSS
STATIC
VGS = 0V, ID = 250A
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250A
Gate‐Body Leakage
IGSS
VDS = 0V, VGS = ±20V
Zero Gate Voltage Drain Current
IDSS
VDS = 24V, VGS = 0V
On‐State Drain Current1 Drain‐Source On‐State Resistance1
Forward Transcon... |
| Document |
 EMB03K03HP Data Sheet
PDF 238.60KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | EMB03N03A |
Excelliance MOS |
MOSFET |
|
| 2 | EMB03N03H |
Excelliance MOS |
MOSFET |
|
| 3 | EMB03N03HR |
Excelliance MOS |
MOSFET |
|
| 4 | EMB03N03V |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 5 | EMB03N06HS |
Excelliance MOS |
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 6 | EMB03P03A |
Excelliance MOS |
MOSFET |
|
Desde 2024. D4U Semiconductor.
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