EMB16P04A Excelliance MOS P-Channel Logic Level Enhancement Mode Field Effect Transistor Datasheet. existencias, precio

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EMB16P04A

Excelliance MOS
EMB16P04A
EMB16P04A EMB16P04A
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Part Number EMB16P04A
Manufacturer Excelliance MOS
Description P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐40V RDSON (MAX.) 16mΩ ID ‐25A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE...
Features oted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = ‐250A VDS = VGS, ID = ‐250A VDS = 0V, VGS = ±20V VDS = ‐32V, VGS = 0V VDS = ‐30V, VGS = 0V, TJ = 125 °C VDS = ‐5V, VGS = ‐10V VGS = ‐10V, ID = ‐25A VGS = ‐4.5V, ID = ‐15A VDS = ‐5V, ID = ‐25A DYNAMIC ‐40 V ‐1.0 ‐1.5 ‐3.0 ±100 nA ‐1 A ‐25 ‐25 A 14 16 mΩ 32 40 ...

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