EMB16P04A |
Part Number | EMB16P04A |
Manufacturer | Excelliance MOS |
Description | P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐40V RDSON (MAX.) 16mΩ ID ‐25A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE... |
Features |
oted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current
On‐State Drain Current1 Drain‐Source On‐State Resistance1
Forward Transconductance1
V(BR)DSS VGS(th) IGSS IDSS
ID(ON) RDS(ON)
gfs
VGS = 0V, ID = ‐250A VDS = VGS, ID = ‐250A VDS = 0V, VGS = ±20V VDS = ‐32V, VGS = 0V VDS = ‐30V, VGS = 0V, TJ = 125 °C VDS = ‐5V, VGS = ‐10V VGS = ‐10V, ID = ‐25A VGS = ‐4.5V, ID = ‐15A
VDS = ‐5V, ID = ‐25A
DYNAMIC
‐40
V
‐1.0 ‐1.5 ‐3.0
±100 nA
‐1 A
‐25
‐25
A
14 16 mΩ
32 40
... |
Document |
EMB16P04A Data Sheet
PDF 219.42KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | EMB16P04V |
Excelliance MOS |
MOSFET | |
2 | EMB16N06A |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
3 | EMB16N06CS |
Excelliance MOS |
MOSFET | |
4 | EMB16N06G |
Excelliance MOS |
MOSFET | |
5 | EMB16N06G |
Kexin |
N-Channel Trench Power MOSFET | |
6 | EMB16N06H |
Excelliance MOS |
MOSFET |