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EMB20N06E |
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| Part Number | EMB20N06E |
| Manufacturer | Excelliance MOS |
| Description | N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 20mΩ ID 60A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE M... |
| Features |
ARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current
On‐State Drain Current1 Drain‐Source On‐State Resistance1
Forward Transconductance1
V(BR)DSS VGS(th) IGSS IDSS
ID(ON) RDS(ON)
gfs
VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 48V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125 °C VDS = 5V, VGS = 10V VGS = 10V, ID = 20A
VGS = 5V, ID = 15A VDS = 5V, ID = 20A
DYNAMIC
60
V
1.2 1.8 3.2
±100 nA
1 A
25
60
A
16 20 mΩ
19 24
25
S
Input Capacitance Out... |
| Document |
 EMB20N06E Data Sheet
PDF 214.90KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | EMB20N03A |
Excelliance MOS |
MOSFET |
|
| 2 | EMB20N03G |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 3 | EMB20N03Q |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 4 | EMB20N03V |
Excelliance MOS |
N-Channel MOSFET |
|
| 5 | EMB20N03VAA |
Excelliance MOS |
MOSFET |
|
| 6 | EMB20N03VAT |
Excelliance MOS |
MOSFET |
|
Desde 2024. D4U Semiconductor.
|