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EMB20P03G |
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| Part Number | EMB20P03G |
| Manufacturer | Excelliance MOS |
| Description | EMB20P03G P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 20mΩ ID ‐10A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Fre... |
| Features |
in2 pad of 2 oz copper.
UNIT V A
mJ W °C
UNIT °C / W
2013/9/18 p.1
EMB20P03G
ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage
Zero Gate Voltage Drain Current
On‐State Drain Current1 Drain‐Source On‐State Resistance1
Forward Transconductance1
V(BR)DSS VGS(th) IGSS
IDSS
ID(ON) RDS(ON)
gfs
VGS = 0V, ID = ‐250A VDS = VGS, ID = ‐250A VDS = 0V, VGS = ±20V VDS = 0V, VGS = ±25V VDS = ‐24V, VGS = 0V VDS = ‐20V, VGS = 0V, TJ = 125 °C VDS =... |
| Document |
 EMB20P03G Data Sheet
PDF 182.95KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | EMB20P03A |
Excelliance MOS |
MOSFET |
|
| 2 | EMB20P03H |
Excelliance MOS |
MOSFET |
|
| 3 | EMB20P03P |
Excelliance MOS |
MOSFET |
|
| 4 | EMB20P03V |
Excelliance MOS |
MOSFET |
|
| 5 | EMB20P03VAT |
Excelliance MOS |
MOSFET |
|
| 6 | EMB20P03VAT-L |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
Desde 2024. D4U Semiconductor.
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