TC1601 TRANSCOM 2W High Linearity and High Efficiency GaAs Power FETs Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

TC1601

TRANSCOM
TC1601
TC1601 TC1601
zoom Click to view a larger image
Part Number TC1601
Manufacturer TRANSCOM
Description The TC1601 is a Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power FET, Which has high linearity and high Power Added Efficiency. The device is processed with a propriety via-hole pr...
Features ! 2W Typical Power at 6 GHz PHOTO ENLARGEMENT ! Linear Power Gain: GL = 12 dB Typical at 6 GHz ! High Linearity: IP3 = 43 dBm Typical at 6 GHz ! Via Holes Source Ground ! Suitable for High Reliability Application ! Breakdown Voltage: BVDGO ≥ 15 V ! Lg = 0.35 µm, Wg = 5 mm ! High Power Added Efficiency: PAE ≥ 43 % for Class A Operation ! Lg = 0.35 µm, Wg = 5 mm ! Tight Vp ranges control ! High RF input power handling capability ! 100 % DC Tested DESCRIPTION The TC1601 is a Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power FET, Which has high linearity and high P...

Document Datasheet TC1601 Data Sheet
PDF 104.13KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 TC1601A
OPPOD
LCD Datasheet
2 TC1601A
TINSHARP
LCD Datasheet
3 TC1601A-01
TINSHARP
LCD Datasheet
4 TC1601A-02WA0
Vatronix
LCD Datasheet
5 TC1601A-14
TINSHARP
LCD Datasheet
6 TC1601L
Winstar
LCD Datasheet
More datasheet from TRANSCOM
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad