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GA04JT17-247 |
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| Part Number | GA04JT17-247 |
| Manufacturer | GeneSiC |
| Description | Normally – OFF Silicon Carbide Junction Transistor Features 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity Temperatu... |
| Features |
175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity Temperature Independent Switching Performance Low Output Capacitance Positive Temperature Coefficient of RDS,ON Suitable for Connecting an Anti-parallel Diode Advantages Compatible with Si MOSFET/IGBT Gate Drive ICs > 20 µs Short-Circuit Withstand Capability Lowest-in-class Conduction Losses High Circuit Efficiency Minimal Input Signal Distortion High Amplifier Bandwidth Package RoHS Compliant D GA04JT17-247 VDS RDS(ON) ID (Tc = 25°C) ID (Tc ... |
| Document |
 GA04JT17-247 Data Sheet
PDF 1.91MB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GA040TH65 |
GeneSiC |
Silicon Carbide Thyristor |
|
| 2 | GA040TH65-CAU |
GeneSiC |
Silicon Carbide Thyristor |
|
| 3 | GA0007-AL |
Coilcraft |
Flyback Transformer |
|
| 4 | GA01PNS100-CAL |
GeneSiC |
Silicon Carbide PiN Diode Chip |
|
| 5 | GA01PNS100-CAU |
GeneSiC |
Silicon Carbide PiN Diode Chip |
|
| 6 | GA01PNS150-220 |
GeneSiC |
Silicon Carbide PiN Diode |
|
Desde 2024. D4U Semiconductor.
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