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HFB1N65S |
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| Part Number | HFB1N65S |
| Manufacturer | SemiHow |
| Description | HFB1N65S Dec 2012 HFB1N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 0.3 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technolo... |
| Features |
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested
TO-92
1 2 3
1.Gate 2. Drain 3. Source D
G
S
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ଇ) – Continuous (TC = 100ଇ) – Pulsed (No... |
| Document |
 HFB1N65S Data Sheet
PDF 241.86KB |
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